Effect of Mn Doping on the Properties of Sol-gel Derived Pb sub(0.3)Sr sub(0.7)TiO sub(3) Thin Films

Thin films of Pb sub(0.3)Sr sub(0.7)TiO sub(3) (PST) and 2 mol% Mn-doped PST (Pb sub(0.3)Sr sub(0.7)Ti sub(0.98)Mn sub(0.02)O sub(3) or PSMT2) were fabricated on (001)-oriented LaAlO sub(3) substrates using sol-gel and spin-coating techniques. The ferroelectric transition temperature did not change...

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Bibliographic Details
Published in:Ferroelectrics 2014-10, Vol.470 (1), p.227-233
Main Authors: Staruch, M, Cil, K, Silva, H, Xiong, J, Jia, Q X, Jain, M
Format: Article
Language:English
Subjects:
Dielectric constant
Doping
Ferroelectric materials
Figure of merit
Manganese
Sol gel process
Thin films
Transition temperature
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Summary:Thin films of Pb sub(0.3)Sr sub(0.7)TiO sub(3) (PST) and 2 mol% Mn-doped PST (Pb sub(0.3)Sr sub(0.7)Ti sub(0.98)Mn sub(0.02)O sub(3) or PSMT2) were fabricated on (001)-oriented LaAlO sub(3) substrates using sol-gel and spin-coating techniques. The ferroelectric transition temperature did not change with Mn doping. However, dielectric constant and figure of merit (K) were found to increase with Mn doping in PST film. At room temperature and 20 kV/cm applied field, a maximum K value of pure PST film was found to be merely 0.887, which improved to 22.36 and 29.85 at 20 kV/cm and 40 kV/cm, respectively for the 2% Mn doped PST film.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2014.923684