Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of the Si(111)-7 x 7 surface in illuminated slightly doped crystals

Physical properties of the Si(111)-7 x 7 surface of low-doped n- and p-type Si samples are studied in the liquid helium temperature region by scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination com...

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Published in:Journal of physics. Condensed matter 2012-10, Vol.24 (39), p.1-5
Main Authors: Odobescu, A B, Zaitsev-Zotov, S V
Format: Article
Language:English
Subjects:
Bending
Condensed matter
Energy gap
Illumination
Liquid helium
Microscopy
Physical properties
Spectroscopy
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container_title Journal of physics. Condensed matter
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creator Odobescu, A B
Zaitsev-Zotov, S V
description Physical properties of the Si(111)-7 x 7 surface of low-doped n- and p-type Si samples are studied in the liquid helium temperature region by scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination completely removes the band bending near the surface and restores the initial population of the surface states. Our results indicate the existence of the energy gap 2[Delta] = 40 + or - 10 meV in the intrinsically populated Si(111)-7 x 7 surface.
doi_str_mv 10.1088/0953-8984/24/39/395003
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Application of illumination completely removes the band bending near the surface and restores the initial population of the surface states. Our results indicate the existence of the energy gap 2[Delta] = 40 + or - 10 meV in the intrinsically populated Si(111)-7 x 7 surface.</abstract><doi>10.1088/0953-8984/24/39/395003</doi><tpages>5</tpages></addata></record>
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subjects Bending
Condensed matter
Energy gap
Illumination
Liquid helium
Microscopy
Physical properties
Spectroscopy
title Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of the Si(111)-7 x 7 surface in illuminated slightly doped crystals
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