Midwave infrared InSb nBn photodetector

In this paper, the first demonstration of InSb photodetector with nBn design is reported. The nBn structure, grown by molecular beam epitaxy (MBE) on InSb substrate, is built by using n-type InSb as absorber layer and InAlSb alloy as barrier layer. The nBn detector, showing cut-off wavelength of 5.4...

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Bibliographic Details
Published in:Electronics letters 2014-09, Vol.50 (20), p.1-1
Main Authors: Evirgen, A, Abautret, J, Perez, J P, Cordat, A, Nedelcu, A, Christol, P
Format: Article
Language:English
Subjects:
Density
Indium antimonides
Infrared
Intermetallics
Molecular beam epitaxy
Photodetectors
Photodiodes
Wavelengths
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Summary:In this paper, the first demonstration of InSb photodetector with nBn design is reported. The nBn structure, grown by molecular beam epitaxy (MBE) on InSb substrate, is built by using n-type InSb as absorber layer and InAlSb alloy as barrier layer. The nBn detector, showing cut-off wavelength of 5.4 μm at 77 K in photovoltaic mode, exhibits dark current density as low as 10^sup -9^ A/cm^sup 2^ at -50 mV reverse bias, at least two decades lower than usual InSb photodiode.
ISSN:0013-5194
1350-911X