60 GHz 28 nm CMOS transformer-coupled power amplifier for WiGig applications

In this paper, a 60 GHz power amplifier (PA) based on a 28 nm CMOS technology is presented for WiGig applications. It consists of a two-stage pseudo-differential common-source structure using low-power and low-Vt transistors, capacitive neutralisation for isolation enhancement and integrated transfo...

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Bibliographic Details
Published in:Electronics letters 2014-09, Vol.50 (20), p.1-1
Main Authors: Leite, B, Kerhervé, E, Ghiotto, A, Larie, A, Martineau, B, Belot, D
Format: Article
Language:English
Subjects:
CMOS
Compressing
Gain
Noise levels
Power amplifiers
Semiconductor devices
Transformations
Transistors
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Summary:In this paper, a 60 GHz power amplifier (PA) based on a 28 nm CMOS technology is presented for WiGig applications. It consists of a two-stage pseudo-differential common-source structure using low-power and low-Vt transistors, capacitive neutralisation for isolation enhancement and integrated transformers for impedance matching, power splitting, power combining and balanced-to-unbalanced transformation purposes. The output-stage transistors have a measured 1 dB output compression point (OCP1 dB) of 10.2 dBm, a 10.2 dB gain and a peak power added efficiency (PAE) as high as 35%. The fabricated PA achieves a 12 dBm OCP1 dB, a 15.3 dB gain and a peak PAE better than 20% while occupying a silicon active area of only 0.037 mm^sup 2^.
ISSN:0013-5194
1350-911X