Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors Znx Cd1-x S , Cux Cd1-x S and Cux Zn1-x S

The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys [subscript]Znx[/subscript] [subscript]Cd1-x[/subscript] S , [subscript]Cux[/subscript] [subscript]Cd1-x[/...

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Bibliographic Details
Published in:International journal of photoenergy 2014-01, Vol.2014
Main Authors: Mayén-Hernández, Sandra Andrea, Santos-Cruz, David, Francisco de Moure-Flores, Sergio Alfonso Pérez-García, Licea-Jiménez, Liliana, Arenas-Arrocena, Ma Concepción, de Jesús Coronel-Hernández, José, Santos-Cruz, José
Format: Article
Language:English
Subjects:
Aqueous solutions
Copper
Deposition
Electrical properties
Energy bands
Glass substrates
Mineralization
Optical properties
Photocatalysis
Semiconductors
Spectrum analysis
Temperature
Thin films
Vacuum annealing
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Summary:The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys [subscript]Znx[/subscript] [subscript]Cd1-x[/subscript] S , [subscript]Cux[/subscript] [subscript]Cd1-x[/subscript] S and [subscript]Cux[/subscript] [subscript]Zn1-x[/subscript] S were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of [subscript]Znx[/subscript] [subscript]Cd1-x[/subscript] S annealed under vacuum at 300°C exhibited the highest photocatalytic activity.
ISSN:1110-662X
1687-529X
DOI:10.1155/2014/158782