All Solution-Processed, Hybrid Light Emitting Field-Effect Transistors

All solution‐processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2014-10, Vol.26 (37), p.6410-6415
Main Authors: Muhieddine, Khalid, Ullah, Mujeeb, Pal, Bhola N., Burn, Paul, Namdas, Ebinazar B.
Format: Article
Language:English
Subjects:
Architecture
Devices
Field effect transistors
hybrid electronics
Light emitting
light emitting transistors
metal oxides
Optoelectronics
polymers
Semiconductor devices
solution processed
Transistors
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Description
Summary:All solution‐processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201400938