Room-Temperature Ferroelectricity in Hexagonal TbMnO3 Thin Films

Piezoresponse force microscopy imaging in conjunction with first‐principles calculations provide strong evidence for room‐temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that...

Full description

Saved in:
Bibliographic Details
Published in:Advanced materials (Weinheim) 2014-12, Vol.26 (45), p.7660-7665
Main Authors: Kim, Dong Jik, Paudel, Tula R., Lu, Haidong, Burton, John D., Connell, John G., Tsymbal, Evgeny Y., Ambrose Seo, S. S., Gruverman, Alexei
Format: Article
Language:English
Subjects:
ferroelectricity
hexagonal rare-earth manganites
resistive switching
strain-engineering
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Piezoresponse force microscopy imaging in conjunction with first‐principles calculations provide strong evidence for room‐temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain‐engineered using epitaxial growth.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201403301