Room-Temperature Ferroelectricity in Hexagonal TbMnO3 Thin Films

Piezoresponse force microscopy imaging in conjunction with first‐principles calculations provide strong evidence for room‐temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that...

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Published in:Advanced materials (Weinheim) 2014-12, Vol.26 (45), p.7660-7665
Main Authors: Kim, Dong Jik, Paudel, Tula R., Lu, Haidong, Burton, John D., Connell, John G., Tsymbal, Evgeny Y., Ambrose Seo, S. S., Gruverman, Alexei
Format: Article
Language:English
Subjects:
ferroelectricity
hexagonal rare-earth manganites
resistive switching
strain-engineering
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container_issue 45
container_start_page 7660
container_title Advanced materials (Weinheim)
container_volume 26
creator Kim, Dong Jik
Paudel, Tula R.
Lu, Haidong
Burton, John D.
Connell, John G.
Tsymbal, Evgeny Y.
Ambrose Seo, S. S.
Gruverman, Alexei
description Piezoresponse force microscopy imaging in conjunction with first‐principles calculations provide strong evidence for room‐temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain‐engineered using epitaxial growth.
doi_str_mv 10.1002/adma.201403301
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subjects ferroelectricity
hexagonal rare-earth manganites
resistive switching
strain-engineering
title Room-Temperature Ferroelectricity in Hexagonal TbMnO3 Thin Films
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