High-power diode lasers at 1178  nm with high beam quality and narrow spectra

High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with more than two watts with a narrow spectral width. These features are believed to make this type of di...

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Bibliographic Details
Published in:Optics letters 2015-01, Vol.40 (1), p.100-102
Main Authors: Paschke, K, Bugge, F, Blume, G, Feise, D, Erbert, G
Format: Article
Language:English
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Summary:High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with more than two watts with a narrow spectral width. These features are believed to make this type of diode laser a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectral range by second-harmonic generation to cover a spectral region currently not accessible with direct emitting diode lasers. Future applications might be the laser-cooling of sodium, high-resolution glucose-content measurements, as well as spectroscopy on rare earth elements.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.40.000100