Controlled growth of crystalline g-C sub(3)N sub(4) nanocone arrays by plasma sputtering reaction deposition

• Published in: Carbon (New York) 2014-11, Vol.79, p.578-589
• Main Authors: Guan, Leilei, Xu, Ning, Liu, Xujun, Zhao, Yu, Li, Hui, Sun, Jian, Wu, Jiada, Ying, Zhifeng
• Format: Article
• Language: English
• Subjects: Arrays; Carbon; Frames; Graphite; Nanostructure; Photoluminescence; Silicon substrates; Sputtering
• ISSN: 0008-6223
• DOI: 10.1016/j.carbon.2014.08.019

Vertically and neatly arranged crystalline graphitic C sub(3)N sub(4) (g-C sub(3)N sub(4)) nanocone arrays were firstly synthesized on nickel-covered silicon (100) substrates supported on a graphite frame. Synthesis was accomplished using an abnormal glow discharge plasma sputtering reaction deposition method with a feed gas mixture of CH sub(4), N sub(2) and H sub(2). The experimental results show that the morphologies, structures, composition and photoluminescence of the grown nanostructures strongly depend on the CH sub(4)(N sub(2) + H sub(2)) ratios (0-1/10). The hexagonal g-C sub(3)N sub(4) nanocone arrays were well grown at a CH sub(4)(N sub(2) + H sub(2)) ratio of around 1/150 as a result of the hydrogen ion sputtering of the graphite frame to generate a lot of carbon atoms, the hydrogen ion etching on the growing graphite structures, and the reaction between the active nitrogen atoms and the sputtered carbon atoms. The g-C sub(3)N sub(4) nanocone arrays have the characteristic photoluminescence-peak of g-C sub(3)N sub(4) and very nice wettability to the polymer absorber layers. At the higher or lower CH sub(4)(N sub(2) + H sub(2)) ratios, the silicon or diamond nanocone arrays were grown respectively due to the ion-sputtering of the silicon substrate and the inhibition of CH sub()nradicals on the H super(+)-sputtering of the graphite frame or the mismatch between the sputtered carbon atoms and the dissociated nitrogen atoms.