Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)–arsenic selenide (As2Se3) multi-layered thin film

• Published in: Journal of non-crystalline solids 2013-10, Vol.378, p.96-100
• Main Authors: Saito, I., Masuzawa, T., Kudo, Y., Pittner, S., Yamada, T., Koh, A.T.T., Chua, D.H.C., Mori, Y., Zahn, D.R.T., Amaratunga, G.A.J., Okano, K.
• Format: Article
• Language: English
• Subjects: Amorphous; Amorphous semiconductors, metals, and alloys; Amorphous structure; Arsenides; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Dark current; Disordered solids; Durability; Electronic transport in condensed matter; Exact sciences and technology; Lasers; Materials science; Nano-layer; Photoconduction and photovoltaic effects; photodielectric effects; Photoconductor; Photoelectric materials; Physics; Selenides; Selenium; Structure of solids and liquids; crystallography; Thin films; Treatment of materials and its effects on microstructure and properties
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2013.06.022

A mille-feuille structured amorphous selenium (a-Se)–arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se–As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105° of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. •Multi-layered a-Se–As2Se3 films were deposited alternatively.•The multi-layered film shows superior durability towards laser and heat.•The multi-layered film shows improved photoelectric properties.•The assumed current path structure may enhance other amorphous photoconductors.