Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwave-induced oxygen plasma towards the ge...

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Bibliographic Details
Published in:Carbon (New York) 2014-11, Vol.79, p.664-669
Main Authors: Rozada, R., Solís-Fernández, P., Paredes, J.I., Martínez-Alonso, A., Ago, H., Tascón, J.M.D.
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Density
Doping
Exact sciences and technology
Graphene
Liquids
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Oxygen plasma
Physics
Vacancies
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Summary:The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwave-induced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103–105μm−2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2014.08.015