Ordered arrays of a defect-modified ferroelectric polymer for non-volatile memory with minimized energy consumption

Ferroelectric polymers are among the most promising materials for flexible electronic devices. Highly ordered arrays of the defect-modified ferroelectric polymer P(VDF-TrFE-CFE) (poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)) are fabricated by nanoimprint lithography for nonvolati...

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Bibliographic Details
Published in:Nanoscale 2014-11, Vol.6 (22), p.13945-13951
Main Authors: Chen, Xiang-Zhong, Chen, Xin, Guo, Xu, Cui, Yu-Shuang, Shen, Qun-Dong, Ge, Hai-Xiong
Format: Article
Language:English
Subjects:
Arrays
Energy consumption
Ferroelectric materials
Ferroelectricity
Lithography
Nanostructure
Orientation
Polarization
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Summary:Ferroelectric polymers are among the most promising materials for flexible electronic devices. Highly ordered arrays of the defect-modified ferroelectric polymer P(VDF-TrFE-CFE) (poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)) are fabricated by nanoimprint lithography for nonvolatile memory application. The defective CFE units reduce the coercive field to one-fifth of that of the un-modified P(VDF-TrFE), which can help minimize the energy consumption and extend the lifespan of the device. The nanoimprint process leads to preferable orientation of polymer chains and delicately controlled distribution of the defects, and thus a bi-stable polarization that makes the memory nonvolatile, as revealed by the pulsed polarization experiment.
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr03866e