Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3: a‐STO) thin film platform with engineered oxygen deficiencies is shown to realize high...

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Bibliographic Details
Published in:Advanced functional materials 2014-11, Vol.24 (43), p.6741-6750
Main Authors: Nili, Hussein, Walia, Sumeet, Balendhran, Sivacarendran, Strukov, Dmitri B., Bhaskaran, Madhu, Sriram, Sharath
Format: Article
Language:English
Subjects:
amorphous SrTiO3
Arrays
Devices
Memory devices
memristors
nanoionics
nanoscale resistive switching
Nanostructure
Oxides
perovskite oxides
Perovskites
Resistors
Switching
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Summary:Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3: a‐STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal‐oxide‐metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a‐STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (103–104) switching ratios, good endurance (>106I–V sweep cycles), and retention with less than 1% change in resistance over repeated 105 s long READ cycles. Nano‐contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano‐switches uniformly distributed over the device area. Furthermore, in situ electrical nanoindentation studies on ultrathin a‐STO/metal stacks highlight the impact of mechanical stress on the modulation of non‐linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results highlight the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems. High performance CMOS/CMOL compatible memristive arrays based on amorphous SrTiO3 thin films with engineered oxygen deficiencies are presented. Isolated nano‐switches are found to be responsible for the excellent switching performance of a‐STO memory cells. Nanoscale electromechanical investigations highlight the assistive role of mechanical stress in nanoionics based conduction and resistive switching in a‐STO devices and confirm their ultimate scalability.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201401278