Loading…

Ten-channel InP-based large-scale photonic integrated transmitter fabricated by SAG technology

A 10-channel InP-based large-scale photonic integrated transmitter was fabricated by selective area growth (SAG) technology combined with butt-joint regrowth (BJR) technology. The SAG technology was utilized to fabricate the electroabsorption modulated distributed feedback (DFB) laser (EML) arrays a...

Full description

Saved in:
Bibliographic Details
Published in:Optics and laser technology 2014-12, Vol.64, p.17-22
Main Authors: Zhang, Can, Zhu, Hongliang, Liang, Song, Cui, Xiao, Wang, Huitao, Zhao, Lingjuan, Wang, Wei
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A 10-channel InP-based large-scale photonic integrated transmitter was fabricated by selective area growth (SAG) technology combined with butt-joint regrowth (BJR) technology. The SAG technology was utilized to fabricate the electroabsorption modulated distributed feedback (DFB) laser (EML) arrays at the same time. The design of coplanar electrodes for electroabsorption modulator (EAM) was used for the flip-chip bonding package. The lasing wavelength of DFB laser could be tuned by the integrated micro-heater to match the ITU grids, which only needs one electrode pad. The average output power of each channel is 250μW with an injection current of 200mA. The static extinction ratios of the EAMs for 10 channels tested are ranged from 15 to 27dB with a reverse bias of 6V. The frequencies of 3dB bandwidth of the chip for each channel are around 14GHz. The novel design and simple fabrication process show its enormous potential in reducing the cost of large-scale photonic integrated circuit (LS-PIC) transmitter with high chip yields. •EML arrays are fabricated by SAG.•Micro-heaters are integrated.•The cost is reduced.
ISSN:0030-3992
1879-2545
DOI:10.1016/j.optlastec.2014.04.020