A high-temperature oxidation-resistant diffusion barrier for PbZr x Ti1-x O3 coating on nanocrystalline diamond film

A buffer layer for PbZr x Ti1-x O3 (PZT) coating on nanocrystalline diamond (NCD) film was investigated to prevent the oxidation damage of NCD layer during ambient air annealing at high-temperature. As for the phase of buffer layer, metal nitride is more effective than pure metal for enhancing adhes...

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Bibliographic Details
Published in:Applied surface science 2014-09, Vol.313, p.577-580
Main Authors: Park, Jong-Keuk, Yoon, Ju-Heon, Lee, Hak-Joo, Jeong, Jeung-hyun, Baik, Young-Joon, Lee, Wook-Seong
Format: Article
Language:English
Subjects:
Adhesion
Adhesive strength
Buffer layers
Coating
Lead zirconate titanates
Multilayers
Nanostructure
Oxidation resistance
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Summary:A buffer layer for PbZr x Ti1-x O3 (PZT) coating on nanocrystalline diamond (NCD) film was investigated to prevent the oxidation damage of NCD layer during ambient air annealing at high-temperature. As for the phase of buffer layer, metal nitride is more effective than pure metal for enhancing adhesion of PZT coating on NCD film. For the metal nitride-based buffer layer, the incorporation of Al and Si increases further the adhesive strength of PZT coating on NCD film. As a microstructural point of view, nanoscale multilayered structure was observed to contribute to the increase of adhesive strength between PZT and NCD. As a consequence, introducing thin (70nm) composite buffer composed of Ti(Al)N/SiN x nanoscale multilayer with bilayer period of 5nm as an intermediate layer between PZT coating and NCD film improved the high-temperature oxidation resistance of the NCD film and relevant adhesive strength of PZT coating even after the 900 degree C air-annealing. The improved adhesion was attributed to the suppressed oxygen diffusion to the NCD film through the PZT layer at high temperature by the intervening nanoscale multilayer buffer.
ISSN:0169-4332
DOI:10.1016/j.apsusc.2014.06.025