LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers

• Published in: Applied surface science 2014-09, Vol.312, p.30-33
• Main Authors: CHROMIK, Š, STRBIK, V, CHOLEVA, P, DOBROCKA, E, ROCH, T, ROSOVA, A, SPANKOVA, M, LALINSKY, T, VANKO, G, LOBOTKA, P, RALBOVSKY, M
• Format: Article
• Language: English
• Subjects: Buffers; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Derivatives; Epitaxial growth; Exact sciences and technology; Metal-insulator transition; Multilayers; Operating temperature; Physics; Thin films; Yttria stabilized zirconia
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2014.05.051

La0.67Sr0.33MnO3 (LSMO) thin films have been grown by a pulsed laser deposition (PLD) on Bi4Ti3O12(BTO)/CeO2/YSZ buffered silicon-on-insulator (SOI) substrates. We compare the properties of these films with results of other authors. We analyse structural properties of LSMO/BTO/CeO2/YSZ/SOI multilayer structure prepared using PLD. Electrical measurements have shown that the temperature corresponding to maximum of resistance derivative (operating temperature of a microbolometer) is about 330K (well above room temperature) and the highest resistivity of metal-insulator transition is at temperature (T P) above 400K. Temperature coefficient of the resistance (TCR) has achieved values of 3.4%K-1 at 325K for some LSMO films. Transmission electron microscopy analysis has confirmed epitaxial growth of all the layers and showed a mosaic character of the LSMO films due to strain relaxation.