Triphenylsulfonium salt methacrylate bound polymer resist for electron beam lithography

A new photoacid generator (PAG) bound polymer containing triphenylsulfonium salt methacrylate (TPSMA) was synthesized and characterized. The PAG bound polymer was employed to improve electron beam lithographic performance, including sensitivity and resolution. The PAG bound polymer resist exhibited...

Full description

Saved in:
Bibliographic Details
Published in:Polymer (Guilford) 2014-08, Vol.55 (16), p.3599-3604
Main Authors: Yoo, Jae Beom, Park, Sang-Wook, Kang, Ha Na, Mondkar, Hemant S., Sohn, Kyunghwa, Kim, Hyun-Mi, Kim, Ki-Bum, Lee, Haiwon
Format: Article
Language:English
Subjects:
Blends
Diffusion
Electron beam lithography
High aspect ratio
Masks
PAG bound polymer
Photoacid generator
Reactive ion etching
Resists
Silicon substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new photoacid generator (PAG) bound polymer containing triphenylsulfonium salt methacrylate (TPSMA) was synthesized and characterized. The PAG bound polymer was employed to improve electron beam lithographic performance, including sensitivity and resolution. The PAG bound polymer resist exhibited a higher sensitivity (120 μC/cm2) than the PAG blend polymer resist (300 μC/cm2). Eliminating the post exposure baking process during development improved the resolution due to decreased acid diffusion. A high-resolution pattern fabricated by electron beam lithography had a line width of 15 nm and a high aspect ratio. The newly developed patterns functioned well as masks for transferring patterns on Si substrates by reactive ion etching. [Display omitted]
ISSN:0032-3861
1873-2291
DOI:10.1016/j.polymer.2014.06.008