Complex Permittivity Determination of Thin-Films Through RF-Measurements of a MIM Capacitor

A method for determining the permittivity and loss tangent of thin-film layers is presented. The method relies on the measurement of the reflection coefficient to a single metal-insulator-metal (MIM) structure without requiring additional de-embedding dummy structures to account for the test-fixture...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2014-11, Vol.24 (11), p.805-807
Main Authors: Sejas-Garcia, Svetlana C., Torres-Torres, Reydezel, Valderrama-B., Rene, Molina, Joel
Format: Article
Language:English
Subjects:
Admittance
Capacitors
Complex permittivity
Dielectric constant
Dielectric measurement
Dielectrics
Equivalent circuits
High K dielectric materials
High-k
Integrated circuit modeling
loss tangent
Microwaves
MIM capacitors
Permittivity
Reflection coefficient
Thin films
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Summary:A method for determining the permittivity and loss tangent of thin-film layers is presented. The method relies on the measurement of the reflection coefficient to a single metal-insulator-metal (MIM) structure without requiring additional de-embedding dummy structures to account for the test-fixture parasitics. Results allow to obtain the frequency-dependent dielectric parameters, whereas the impact of the test-fixture parasitics is quantified by developing the corresponding equivalent circuit model. The accuracy of this model is verified by obtaining excellent simulation-experiment correlation of the MIM admittance at microwave frequencies.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2014.2348179