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Synthesis, characterization, and field-effect transistor performance of a two-dimensional starphene containing sulfur

A novel two-dimensional (2D) starphene containing sulfur organic semiconductor material BTBTT was synthesized. The spectroscopy, electrochemistry and thermostability of the semiconductor material were investigated, and it was observed that the compound exhibits good stability. The BTBTT exhibits a s...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2014-01, Vol.2 (46), p.111-116
Main Authors: Zou, Sufen, Wang, Yingfeng, Gao, Jianhua, Liu, Xiaoxia, Hao, Wanglong, Zhang, Huarong, Zhang, Haixia, Xie, Hui, Yang, Chengdong, Li, Hongxiang, Hu, Wenping
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Language:English
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Summary:A novel two-dimensional (2D) starphene containing sulfur organic semiconductor material BTBTT was synthesized. The spectroscopy, electrochemistry and thermostability of the semiconductor material were investigated, and it was observed that the compound exhibits good stability. The BTBTT exhibits a strong aggregation tendency, forming long single-crystal nanowires, as evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The organic field-effect transistors (OFETs) devices were fabricated based on the thin films and single-crystal nanowires of BTBTT , respectively, which exhibit excellent FET performances with a high hole mobility of up to 0.56 cm 2 V −1 s −1 with low threshold voltages. A novel starphene containing sulfur exhibits an excellent FET performance with a mobility of 0.56 cm 2 V −1 s −1 based on the single-crystal nanowires.
ISSN:2050-7526
2050-7534
DOI:10.1039/c4tc01667j