Pressure dependence of Raman spectrum in InAs nanowires

We report on a Raman scattering experiment under high pressure on InAs nanowires with mainly wurtzite crystal structure. The dependence of the phonon modes on applied pressure due to the modification of the lattice parameters has been determined along with the transverse dynamical charge. Contrary t...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2014-06, Vol.26 (23), p.235301-7
Main Authors: Yazji, Sara, Zardo, Ilaria, Hertenberger, Simon, Morkötter, Stefanie, Koblmüller, Gregor, Abstreiter, Gerhard, Postorino, Paolo
Format: Article
Language:English
Subjects:
Arsenicals - chemistry
Band structure of solids
Condensed matter
Crystal structure
Crystallization
high pressure
InAs nanowires
Indium - chemistry
Indium arsenides
Lattice parameters
Models, Chemical
Nanowires
Nanowires - chemistry
Phase Transition
Phonons
Pressure
Raman spectroscopy
Spectrum Analysis, Raman - methods
Surface Properties
Wurtzite
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Summary:We report on a Raman scattering experiment under high pressure on InAs nanowires with mainly wurtzite crystal structure. The dependence of the phonon modes on applied pressure due to the modification of the lattice parameters has been determined along with the transverse dynamical charge. Contrary to bulk InAs, no structural transition to rock salt phase has been observed in the investigated pressure range, while an anomalous behavior of the full-width at half-maximum has been noted. Our data suggest that wurtzite InAs NWs go through a tetragonal intermediate phase. Furthermore, the resonance profile of the phonon modes as a function of the applied pressure has been investigated, giving insights into the band structure of wurtzite InAs.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/26/23/235301