Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

A 3D high‐density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which ca...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-01, Vol.27 (1), p.59-64
Main Authors: Lee, Daeseok, Park, Jaesung, Park, Jaehyuk, Woo, Jiyong, Cha, Euijun, Lee, Sangheon, Moon, Kibong, Song, Jeonghwan, Koo, Yunmo, Hwang, Hyunsang
Format: Article
Language:English
Subjects:
3D structure
cross-point array
Devices
Memory devices
metal-insulator transition
Nanostructure
non-volatilememory
Optimization
Switching
Three dimensional
titanium oxide
Titanium oxides
two-terminal switch
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Summary:A 3D high‐density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high‐density ReRAM applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201403675