Simulation of the characteristics of low-energy proton induced single event upset

• Published in: Science China. Physics, mechanics & astronomy mechanics & astronomy, 2014-10, Vol.57 (10), p.1902-1906
• Main Authors: Geng, Chao, Xi, Kai, Liu, TianQi, Liu, Jie
• Format: Article
• Language: English
• Subjects: Astronomy; Charge; Classical and Continuum Physics; Computer simulation; Cross sections; Deposition; Energy loss; Ionization; Low energy; MBUS; Monte Carlo simulation; Observations and Techniques; Physics; Physics and Astronomy; Protons; Single event upsets; Static random access memory; 低能量; 单粒子翻转; 模拟; 横截面; 特性; 质子; 静态随机存取存储器
• ISSN: 1674-7348; 1869-1927
• DOI: 10.1007/s11433-014-5414-4

Monte Carlo simulation results are reported on the single event upset （SEU） triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory （SRAM） were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets （MBUs） when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.