Imaging of dopant distribution in optical fibers with an orthogonal TOF SIMS

The analysis of doping element distribution in optical fiber cross sections requires a sensitive high spatial resolution technique. We demonstrate that a compact orthogonal Time‐of‐Flight (TOF) mass spectrometer attached to a multitechnique FIB‐SEM‐EDX system can be used to analyze cross sections of...

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Bibliographic Details
Published in:Surface and interface analysis 2014-11, Vol.46 (S1), p.238-240
Main Authors: Lorincik, J, Kasik, I, Vanis, J, Sedlacek, L, Dluhos, J
Format: Article
Language:English
Subjects:
Conversion
Cross sections
dopant
EDX
Interface analysis
Ion beams
Mass spectrometers
Optical fibers
Secondary ion mass spectrometry
TOF SIMS
X-rays
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Summary:The analysis of doping element distribution in optical fiber cross sections requires a sensitive high spatial resolution technique. We demonstrate that a compact orthogonal Time‐of‐Flight (TOF) mass spectrometer attached to a multitechnique FIB‐SEM‐EDX system can be used to analyze cross sections of as manufactured optical fibers. By performing quantitative Energy Dispersive X‐Ray (EDX) analysis of the optical preform, from which the fibers were drawn, we obtained conversion factors, which enabled the quantification of the Focused Ion Beam (FIB) SIMS profiles of the fiber cross sections. Copyright © 2014 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.5536