Synthesis of CdS nano-spheres by a simple and fast sonochemical method at room temperature

Nano-spheres of hexagonal CdS were prepared by a sonochemical method using CdCl2 and Na2S2O3 as precursors, with different molar ratios of cadmium and sulfur in starting solutions, in ethylene glycol and cetyltrimethylammonium bromide (CTAB) as a surfactant. The XRD patterns for all samples presente...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2014-12, Vol.136, p.111-113
Main Authors: Lopes, Paula A.L., Brandão Santos, Maurício, Mascarenhas, Artur José Santos, Silva, Luciana Almeida
Format: Article
Language:English
Subjects:
Cadmium
Cadmium sulfides
CdS
Crystallites
Nano-spheres
Nanostructure
Semiconductors
Sonochemical method
Sulfur
Surfactants
Synthesis
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Nano-spheres of hexagonal CdS were prepared by a sonochemical method using CdCl2 and Na2S2O3 as precursors, with different molar ratios of cadmium and sulfur in starting solutions, in ethylene glycol and cetyltrimethylammonium bromide (CTAB) as a surfactant. The XRD patterns for all samples presented the set of peaks characteristic of CdS in hexagonal phase. The crystallite size decreases as the sulfur content increased in the starting solution as a consequence of the quick release of sulfide ions trapped in the micelles formed by the CTAB surfactant, which controls the CdS nanoparticles growth. The diffuse reflectance spectroscopy (DRS) results have shown that it is possible to tune the emission of visible light of the CdS semiconductor changing only the starting Cd:S ratios in this synthesis procedure. •Hexagonal CdS was prepared as homogeneous nano-spheres by a sonochemical method.•The crystallite size decreases as the sulfur content increased in the starting solution.•It was possible to tune the emission of visible light of the CdS changing Cd:S ratios in the synthesis procedure.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2014.07.173