Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties

This research reports the sintering mechanism of Ga doped ZnO (GZO) ceramic targets. The GZO powders with different Ga doping concentrations were synthesized by chemical co-precipitation method and compacted to form green compacts. The green compacts underwent a normal sintering process under differ...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2014-11, Vol.27, p.1-11
Main Authors: Liu, Jia, Zhang, Weijia, Song, Dengyuan, Ma, Qiang, Zhang, Lei, Zhang, Hui, Ma, Xiaobo, Song, Haiyang
Format: Article
Language:English
Subjects:
Applied sciences
Compacts
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Density
Deposition by sputtering
Doping
Electron states
Electronic properties
Exact sciences and technology
Materials science
Materials synthesis
materials processing
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Methods of electronic structure calculations
Microstructure
Physics
Powder metallurgy
Powder metallurgy. Composite materials
Production techniques
Semiconductors
Sintering
Sintering (powder metallurgy)
Technology
Thin films
Zinc oxide
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Summary:This research reports the sintering mechanism of Ga doped ZnO (GZO) ceramic targets. The GZO powders with different Ga doping concentrations were synthesized by chemical co-precipitation method and compacted to form green compacts. The green compacts underwent a normal sintering process under different temperatures. Then a series of GZO targets sintered at 1300°C were used for depositing thin films by DC magnetron sputtering method. The influences of sintering temperature and doping concentration on the densification, structural and electrical properties of GZO targets were investigated. Results showed that Ga doping effectively promoted the qualities of GZO targets. When sintering temperature surpassed 1300°C, the relative densities for all the targets were higher than 97%. The lowest resistivity of 2.25×10−3Ωcm was attained on the 0.5at% Ga doped ZnO sintered at 1300°C. In addition, the performances of GZO thin films were greatly influenced by the qualities of their sputtering targets.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2014.06.005