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Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of tera...

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Bibliographic Details
Published in:Optical engineering 2014-03, Vol.53 (3), p.031206-031206
Main Authors: Otsuji, Taiichi, Watanabe, Takayuki, Tombet, Stephane Albon Boubanga, Satou, Akira, Ryzhii, Victor, Popov, Vyacheslav, Knap, Wojciech
Format: Article
Language:English
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Summary:The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. Excellent THz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on THz imaging are also presented.
ISSN:0091-3286
1560-2303
DOI:10.1117/1.OE.53.3.031206