High-Speed Deposition of SiC Thick Film by Halide Precursor

Polycrystalline ڂ˽SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and p...

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Bibliographic Details
Published in:Key engineering materials 2014-06, Vol.616, p.37-42
Main Authors: Zheng, Ding Heng, Goto, Takashi, Han, Ming Xu, Zhang, Song, Zhou, Wei, Tu, Rong
Format: Article
Language:English
Subjects:
Deposition
Graphite
High speed
Morphology
Preferred orientation
Silicon carbide
Texts
Thick films
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Summary:Polycrystalline ڂ˽SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from to with increasing Tdep. The maximum deposition rate (Rdep) of 1125 ڌ̽˰̸−1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.616.37