Preparation and Characterization of SiC Coating on Graphite Substrate

High thermal conductivity and dense SiC coating were fabricated by chemical vapor deposition (CVD) on surface of different graphite at temperature of 1100°C. The results indicated that the thickness of the coating influences the quality of coating. There was no crack in coating when thickness of the...

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Bibliographic Details
Published in:Key engineering materials 2014-03, Vol.602-603, p.412-415
Main Authors: Wang, Chun Peng, Huo, Yan Li, Wang, Guang Hai, Chen, Shu Guang, Liu, Hai Lin, Zhou, Jian, Liang, Hai Long, Hu, Chuan Qi
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Chemical vapor infiltration
Coating
Cross sections
Crystallites
Deposition
Graphite
Silicon carbide
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Summary:High thermal conductivity and dense SiC coating were fabricated by chemical vapor deposition (CVD) on surface of different graphite at temperature of 1100°C. The results indicated that the thickness of the coating influences the quality of coating. There was no crack in coating when thickness of the coating is less than 0.3mm. The structure of graphite affected the reaction badly. When the graphite is coarse and porous the reaction is chemical vapor infiltration (CVI) and the interface of coating and substrate isnt obvious. When the graphite is dense and smooth, the coating is covered in surface of graphite, the interface is found between the coating and substrate. Optical microscope and SEM were used to observe the surface and cross-section morphology and microstructure of coatings. It shown coating and substrate had a good combination and the deposited grains mainly showed equiaxed form with the crystallite size of 30 nm at 1100°C.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.602-603.412