Contactless probing of the intrinsic carrier transport single-walled carbon nanotubes

• Published in: Nano research 2014-11, Vol.7 (11), p.1623-1630
• Main Authors: Li, Yize Stephanie, Ge, Jun, Cai, Jinhua, Zhang, Jie, Lu, Wei, Liu, Jia, Chen, Liwei
• Format: Article
• Language: English
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Carbon; Carrier transport; Chemical vapor deposition; Chemistry and Materials Science; Condensed Matter Physics; Dielectric properties; Electric potential; Electrons; Experiments; Materials Science; Mathematical models; Microscopy; Nanomaterials; Nanostructure; Nanotechnology; Nanowires; Research Article; Semiconductor research; Single wall carbon nanotubes; Transistors; Transport; Voltage; 介电响应; 单壁碳纳米管; 场效应晶体管; 本征; 纳米级分辨率; 载流子传输; 输运特性; 非接触式探测
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-014-0522-z

Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.