50 nm Al sub(x)O sub(y) ReRAM program 31% energy, 1.6 endurance, and 3.6 speed improvement by advanced cell condition adaptive verify-reset

Two verify-reset schemes are proposed to improve the program energy, endurance and speed of 50 nm Al sub(x)O sub(y) ReRAM cells. Both of the proposed schemes improve the verify-reset program by adapting the program voltage and pulse width to the variation of ReRAM cell filament status during the ver...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 2015-01, Vol.103, p.64-72
Main Authors: Ning, Sheyang, Iwasaki, Tomoko Ogura, Takeuchi, Ken
Format: Article
Language:English
Subjects:
Durability
Electric potential
Endurance
Filaments
Pulse width
Reduction
Stresses
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Two verify-reset schemes are proposed to improve the program energy, endurance and speed of 50 nm Al sub(x)O sub(y) ReRAM cells. Both of the proposed schemes improve the verify-reset program by adapting the program voltage and pulse width to the variation of ReRAM cell filament status during the verify-reset. In this paper, first, the reset resistance and cell endurance are compared using different reset voltages and reset pulse widths. Then, two proposed verify-reset schemes are introduced independently. The first proposed scheme controlled reset voltage (V sub(reset)) increment demonstrates 32% program energy reduction and 6.7 program speed increase. In this scheme, the reset voltage stress is increased from -1.5 V to -1.65 V, only when the reset-tries fail continuously during verify-reset (hard-to-reset). The second proposed scheme set-before-reset applies the set pulse during verify-reset, to convert the filament from a hard-to-reset state to an easy-to-reset state. With this approach, 31% program energy reduction, 1.6 program endurance and 3.6 program speed increase can be obtained simultaneously.
ISSN:0038-1101
DOI:10.1016/j.sse.2014.10.003