Comparison of electron–phonon and hole–phonon energy loss rates in silicon

•We investigate carrier-phonon coupling in p and n doped silicon.•We utilise tunnel junction thermometry to measure carrier temperature.•Holes are more strongly coupled to the lattice temperature than the electrons.•Comparisons are made to theoretical predictions. The hole-phonon energy loss rate in...

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Bibliographic Details
Published in:Solid-state electronics 2015-01, Vol.103, p.40-43
Main Authors: Richardson-Bullock, J.S., Prest, M.J., Shah, V.A., Gunnarsson, D., Prunnila, M., Dobbie, A., Myronov, M., Morris, R.J.H., Whall, T.E., Parker, E.H.C., Leadley, D.R.
Format: Article
Language:English
Subjects:
Coupling
Electron
Energy loss rate
Hole
Phonon
Phonons
Silicon
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Summary:•We investigate carrier-phonon coupling in p and n doped silicon.•We utilise tunnel junction thermometry to measure carrier temperature.•Holes are more strongly coupled to the lattice temperature than the electrons.•Comparisons are made to theoretical predictions. The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300mK to 700mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron–phonon energy loss rate over an identical temperature range.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2014.09.002