Mapping Charge-Carrier Density Across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy

In situ confocal Raman microscopy is used to map the recombination zone (induced p–n junction) in an ambipolar carbon‐nanotube‐network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge‐carr...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2014-12, Vol.26 (47), p.7986-7992
Main Authors: Grimm, Stefan B., Jakubka, Florian, Schießl, Stefan P., Gannott, Florentina, Zaumseil, Jana
Format: Article
Language:English
Subjects:
ambipolar
carbon nanotubes
Charge transport
Confocal
Density
electrolyte-gating
mapping
Microscopy
P-n junctions
Raman microscopy
Semiconductor devices
Transistors
Two dimensional
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Summary:In situ confocal Raman microscopy is used to map the recombination zone (induced p–n junction) in an ambipolar carbon‐nanotube‐network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge‐carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201403655