Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O 2 and CF x plasmas. A new class of polycyclosilane–polysiloxane hybrid materials and their thin films exhibited...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (2), p.239-242
Main Authors: Park, Sung Jin, Cho, Hyeon Mo, Lee, Myong Euy, Kim, Miyoung, Han, Kwenwoo, Hong, Seunghee, Lim, Sanghak, Lee, Hansong, Hwang, Byeonggyu, Kim, Sang Kyun, Shim, Sangdeok, Kang, Philjae, Choi, Moon-Gun
Format: Article
Language:English
Subjects:
Etching
Materials selection
Optical properties
Plasmas
Selectivity
Silicon
Silicon films
Thin films
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Summary:A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O 2 and CF x plasmas. A new class of polycyclosilane–polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents.
ISSN:2050-7526
2050-7534
DOI:10.1039/C4TC01917B