Turn-off instabilities in large area IGBTs

In this paper, an experimental study is proposed to investigate the failure effects in IGBT large-area devices due to hard gate driving strategies. Thanks to quasi-3D simulations, a large overcurrent is predicted in few cells and corresponds to a large spike in the gate voltage during collector volt...

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Bibliographic Details
Published in:Microelectronics and reliability 2014-09, Vol.54 (9-10), p.1927-1934
Main Authors: Abbate, C., Iannuzzo, F., Busatto, G., Sanseverino, A., Velardi, F., Ronsisvalle, C., Victory, J.
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gate driving
Gates
IGBT
Instabilities
Instability
Latch-up
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
Reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spikes
Stability
Strategy
Voltage
Citations: Items that this one cites
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Summary:In this paper, an experimental study is proposed to investigate the failure effects in IGBT large-area devices due to hard gate driving strategies. Thanks to quasi-3D simulations, a large overcurrent is predicted in few cells and corresponds to a large spike in the gate voltage during collector voltage transient, which is able to trigger the device instability. An interpretation of the phenomenon is given that attributes such spike to a strong current imbalance on the large area device, so that a latch-up failure mechanism is proposed.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2014.07.128