Low-power phase change memory with multilayer TiN/W nanostructure electrode

In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer e...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2014-12, Vol.117 (4), p.1933-1940
Main Authors: Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wu, Liangcai, Wang, Guoxiang, Dai, Shixun
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Electric potential
Electrodes
Machines
Manufacturing
Multilayers
Nanostructure
Nanotechnology
Optical and Electronic Materials
Phase change
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thickness ratio
Thin Films
Tin
Voltage
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Summary:In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8660-4