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Low-power phase change memory with multilayer TiN/W nanostructure electrode

In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer e...

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Published in:Applied physics. A, Materials science & processing Materials science & processing, 2014-12, Vol.117 (4), p.1933-1940
Main Authors: Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wu, Liangcai, Wang, Guoxiang, Dai, Shixun
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cited_by cdi_FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3
cites cdi_FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3
container_end_page 1940
container_issue 4
container_start_page 1933
container_title Applied physics. A, Materials science & processing
container_volume 117
creator Lu, Yegang
Song, Sannian
Shen, Xiang
Song, Zhitang
Wu, Liangcai
Wang, Guoxiang
Dai, Shixun
description In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.
doi_str_mv 10.1007/s00339-014-8660-4
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1651433645</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1651433645</sourcerecordid><originalsourceid>FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3</originalsourceid><addsrcrecordid>eNp9kDtPwzAUhS0EEqXwA9gyspj6FccZUcVLRLAUMVqufUNTJXGwE1X997gKM3e5y3eOdD6Ebim5p4QUq0gI5yUmVGAlJcHiDC2o4AwTyck5WpBSFFjxUl6iqxj3JJ1gbIHeKn_Agz9AyIadiZDZnem_Ieug8-GYHZpxl3VTOzatOSZm07yvvrLe9D6OYbLjFCCDFuwYvINrdFGbNsLN31-iz6fHzfoFVx_Pr-uHClte0hEzap2xTuW2sKUqDChBKDfS5IrRWmylEramkFPpLGOKEJdT50xaIMqtUI4v0d3cOwT_M0EcdddEC21revBT1FTmaTqXIk8onVEbfIwBaj2EpjPhqCnRJ3F6FqeTOH0Sp0XKsDkTE5tcBL33U-jTon9CvxircM8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1651433645</pqid></control><display><type>article</type><title>Low-power phase change memory with multilayer TiN/W nanostructure electrode</title><source>Springer Nature</source><creator>Lu, Yegang ; Song, Sannian ; Shen, Xiang ; Song, Zhitang ; Wu, Liangcai ; Wang, Guoxiang ; Dai, Shixun</creator><creatorcontrib>Lu, Yegang ; Song, Sannian ; Shen, Xiang ; Song, Zhitang ; Wu, Liangcai ; Wang, Guoxiang ; Dai, Shixun</creatorcontrib><description>In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-014-8660-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electric potential ; Electrodes ; Machines ; Manufacturing ; Multilayers ; Nanostructure ; Nanotechnology ; Optical and Electronic Materials ; Phase change ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Thickness ratio ; Thin Films ; Tin ; Voltage</subject><ispartof>Applied physics. A, Materials science &amp; processing, 2014-12, Vol.117 (4), p.1933-1940</ispartof><rights>Springer-Verlag Berlin Heidelberg 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3</citedby><cites>FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Lu, Yegang</creatorcontrib><creatorcontrib>Song, Sannian</creatorcontrib><creatorcontrib>Shen, Xiang</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Wang, Guoxiang</creatorcontrib><creatorcontrib>Dai, Shixun</creatorcontrib><title>Low-power phase change memory with multilayer TiN/W nanostructure electrode</title><title>Applied physics. A, Materials science &amp; processing</title><addtitle>Appl. Phys. A</addtitle><description>In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Multilayers</subject><subject>Nanostructure</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Phase change</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thickness ratio</subject><subject>Thin Films</subject><subject>Tin</subject><subject>Voltage</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kDtPwzAUhS0EEqXwA9gyspj6FccZUcVLRLAUMVqufUNTJXGwE1X997gKM3e5y3eOdD6Ebim5p4QUq0gI5yUmVGAlJcHiDC2o4AwTyck5WpBSFFjxUl6iqxj3JJ1gbIHeKn_Agz9AyIadiZDZnem_Ieug8-GYHZpxl3VTOzatOSZm07yvvrLe9D6OYbLjFCCDFuwYvINrdFGbNsLN31-iz6fHzfoFVx_Pr-uHClte0hEzap2xTuW2sKUqDChBKDfS5IrRWmylEramkFPpLGOKEJdT50xaIMqtUI4v0d3cOwT_M0EcdddEC21revBT1FTmaTqXIk8onVEbfIwBaj2EpjPhqCnRJ3F6FqeTOH0Sp0XKsDkTE5tcBL33U-jTon9CvxircM8</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Lu, Yegang</creator><creator>Song, Sannian</creator><creator>Shen, Xiang</creator><creator>Song, Zhitang</creator><creator>Wu, Liangcai</creator><creator>Wang, Guoxiang</creator><creator>Dai, Shixun</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141201</creationdate><title>Low-power phase change memory with multilayer TiN/W nanostructure electrode</title><author>Lu, Yegang ; Song, Sannian ; Shen, Xiang ; Song, Zhitang ; Wu, Liangcai ; Wang, Guoxiang ; Dai, Shixun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electric potential</topic><topic>Electrodes</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Multilayers</topic><topic>Nanostructure</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Phase change</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thickness ratio</topic><topic>Thin Films</topic><topic>Tin</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Yegang</creatorcontrib><creatorcontrib>Song, Sannian</creatorcontrib><creatorcontrib>Shen, Xiang</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Wang, Guoxiang</creatorcontrib><creatorcontrib>Dai, Shixun</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science &amp; processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Yegang</au><au>Song, Sannian</au><au>Shen, Xiang</au><au>Song, Zhitang</au><au>Wu, Liangcai</au><au>Wang, Guoxiang</au><au>Dai, Shixun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-power phase change memory with multilayer TiN/W nanostructure electrode</atitle><jtitle>Applied physics. A, Materials science &amp; processing</jtitle><stitle>Appl. Phys. A</stitle><date>2014-12-01</date><risdate>2014</risdate><volume>117</volume><issue>4</issue><spage>1933</spage><epage>1940</epage><pages>1933-1940</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-014-8660-4</doi><tpages>8</tpages></addata></record>
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1432-0630
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subjects Characterization and Evaluation of Materials
Condensed Matter Physics
Electric potential
Electrodes
Machines
Manufacturing
Multilayers
Nanostructure
Nanotechnology
Optical and Electronic Materials
Phase change
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thickness ratio
Thin Films
Tin
Voltage
title Low-power phase change memory with multilayer TiN/W nanostructure electrode
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T22%3A24%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-power%20phase%20change%20memory%20with%20multilayer%20TiN/W%20nanostructure%20electrode&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Lu,%20Yegang&rft.date=2014-12-01&rft.volume=117&rft.issue=4&rft.spage=1933&rft.epage=1940&rft.pages=1933-1940&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-014-8660-4&rft_dat=%3Cproquest_cross%3E1651433645%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1651433645&rft_id=info:pmid/&rfr_iscdi=true