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Low-power phase change memory with multilayer TiN/W nanostructure electrode
In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer e...
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Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2014-12, Vol.117 (4), p.1933-1940 |
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Main Authors: | , , , , , , |
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cites | cdi_FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3 |
container_end_page | 1940 |
container_issue | 4 |
container_start_page | 1933 |
container_title | Applied physics. A, Materials science & processing |
container_volume | 117 |
creator | Lu, Yegang Song, Sannian Shen, Xiang Song, Zhitang Wu, Liangcai Wang, Guoxiang Dai, Shixun |
description | In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode. |
doi_str_mv | 10.1007/s00339-014-8660-4 |
format | article |
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Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-014-8660-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electric potential ; Electrodes ; Machines ; Manufacturing ; Multilayers ; Nanostructure ; Nanotechnology ; Optical and Electronic Materials ; Phase change ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Thickness ratio ; Thin Films ; Tin ; Voltage</subject><ispartof>Applied physics. 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A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Multilayers</subject><subject>Nanostructure</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Phase change</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thickness ratio</subject><subject>Thin Films</subject><subject>Tin</subject><subject>Voltage</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kDtPwzAUhS0EEqXwA9gyspj6FccZUcVLRLAUMVqufUNTJXGwE1X997gKM3e5y3eOdD6Ebim5p4QUq0gI5yUmVGAlJcHiDC2o4AwTyck5WpBSFFjxUl6iqxj3JJ1gbIHeKn_Agz9AyIadiZDZnem_Ieug8-GYHZpxl3VTOzatOSZm07yvvrLe9D6OYbLjFCCDFuwYvINrdFGbNsLN31-iz6fHzfoFVx_Pr-uHClte0hEzap2xTuW2sKUqDChBKDfS5IrRWmylEramkFPpLGOKEJdT50xaIMqtUI4v0d3cOwT_M0EcdddEC21revBT1FTmaTqXIk8onVEbfIwBaj2EpjPhqCnRJ3F6FqeTOH0Sp0XKsDkTE5tcBL33U-jTon9CvxircM8</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Lu, Yegang</creator><creator>Song, Sannian</creator><creator>Shen, Xiang</creator><creator>Song, Zhitang</creator><creator>Wu, Liangcai</creator><creator>Wang, Guoxiang</creator><creator>Dai, Shixun</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141201</creationdate><title>Low-power phase change memory with multilayer TiN/W nanostructure electrode</title><author>Lu, Yegang ; Song, Sannian ; Shen, Xiang ; Song, Zhitang ; Wu, Liangcai ; Wang, Guoxiang ; Dai, Shixun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c391t-21cdacd85c7c987ae84013a6a5821f4b684cf1e516dc22800d51dda09449b48d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electric potential</topic><topic>Electrodes</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Multilayers</topic><topic>Nanostructure</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Phase change</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thickness ratio</topic><topic>Thin Films</topic><topic>Tin</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Yegang</creatorcontrib><creatorcontrib>Song, Sannian</creatorcontrib><creatorcontrib>Shen, Xiang</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Wang, Guoxiang</creatorcontrib><creatorcontrib>Dai, Shixun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Yegang</au><au>Song, Sannian</au><au>Shen, Xiang</au><au>Song, Zhitang</au><au>Wu, Liangcai</au><au>Wang, Guoxiang</au><au>Dai, Shixun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-power phase change memory with multilayer TiN/W nanostructure electrode</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2014-12-01</date><risdate>2014</risdate><volume>117</volume><issue>4</issue><spage>1933</spage><epage>1940</epage><pages>1933-1940</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-014-8660-4</doi><tpages>8</tpages></addata></record> |
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source | Springer Nature |
subjects | Characterization and Evaluation of Materials Condensed Matter Physics Electric potential Electrodes Machines Manufacturing Multilayers Nanostructure Nanotechnology Optical and Electronic Materials Phase change Physics Physics and Astronomy Processes Surfaces and Interfaces Thickness ratio Thin Films Tin Voltage |
title | Low-power phase change memory with multilayer TiN/W nanostructure electrode |
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