Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe

•Surface of CdTe sample was modified using different treatments.•Resistivity and photoconductivity were mapped using the contactless method.•Properties of CdTe were correlated with surface morphology.•A surface preparation is suggested to minimize the dark current and s/n ratio. We investigated the...

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Bibliographic Details
Published in:Applied surface science 2014-10, Vol.315, p.144-148
Main Authors: Zázvorka, J., Franc, J., Moravec, P., Jesenská, E., Šedivý, L., Ulrych, J., Mašek, K.
Format: Article
Language:English
Subjects:
Cadmium zinc tellurides
CdTe
Chemical etching
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Contactless resistivity
Correlation
Cross-disciplinary physics: materials science
rheology
Electrical resistivity
Exact sciences and technology
Lapping
Material characterization
Oxides
Photoconductivity
Physics
Surface preparation
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Summary:•Surface of CdTe sample was modified using different treatments.•Resistivity and photoconductivity were mapped using the contactless method.•Properties of CdTe were correlated with surface morphology.•A surface preparation is suggested to minimize the dark current and s/n ratio. We investigated the influence of lapping, polishing and chemical etching of semi-insulating CdZnTe by the contactless resistivity and photoconductivity method. This method can determine the sample parameters independent of the type and quality of the metallization. We observed that the evaluated sample resistivity varies with the surface preparation method up to a factor of two. The photoconductivity anti-correlates with resistivity and it changes strongly within one order of magnitude. We determined a correlation between surface roughness, oxide layer thickness and material resistivity. Deviation of the trends is visible with surface preparation by chemical etching. We propose an optimal surface treatment to maximize the resistivity and thus to decrease the dark current.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2014.07.104