Photoluminescence study of nitrogen-doped p-type Mg sub( x )Zn sub(1-x )O nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy

Temperature-dependent photoluminescence of nitrogen-doped p-type Mg sub( x )Zn sub(1-x )O nanocrystalline thin film grown on c-plane sapphire substrate by rf plasma-assisted molecular beam epitaxy is investigated. P-type behavior is confirmed by both Hall effect and Seebeck measurements. Structural...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2014-11, Vol.117 (3), p.1467-1472
Main Authors: Morshed, Muhammad M, Zuo, Zheng, Huang, Jian, Zheng, Jian-Guo, Lin, Qiyin, Yan, Xiaoqing, Liu, Jianlin
Format: Article
Language:English
Subjects:
Emission
Excitation
Magnesium
Mathematical analysis
Molecular beam epitaxy
Nanocrystals
Photoluminescence
Thin films
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Summary:Temperature-dependent photoluminescence of nitrogen-doped p-type Mg sub( x )Zn sub(1-x )O nanocrystalline thin film grown on c-plane sapphire substrate by rf plasma-assisted molecular beam epitaxy is investigated. P-type behavior is confirmed by both Hall effect and Seebeck measurements. Structural defect-related bound excitonic emission peak is distinguished at around ~50 meV lower than peak energy of the near band edge neutral acceptor bound excitonic emission. Typical 'S shape' behavior of energy position versus temperature is observed due to polarization-induced internal field. Nitrogen-related acceptor ionization energy is calculated to be ~180-200 meV.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8576-z