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Probing the limits of gate-based charge sensing
Quantum computation requires a qubit-specific measurement capability to readout the final state of individual qubits. Promising solid-state architectures use external readout electrometers but these can be replaced by a more compact readout element, an in situ gate sensor. Gate-sensing couples the q...
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Published in: | Nature communications 2015-01, Vol.6 (1), p.6084-6084, Article 6084 |
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creator | Gonzalez-Zalba, M. F. Barraud, S. Ferguson, A. J. Betz, A. C. |
description | Quantum computation requires a qubit-specific measurement capability to readout the final state of individual qubits. Promising solid-state architectures use external readout electrometers but these can be replaced by a more compact readout element, an
in situ
gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit’s radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 μe Hz
−1/2
, the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.
Reading out the state of quantum bits is an essential requirement that any quantum computer implementation must satisfy. Gonzalez-Zalba
et al
. now show that
in situ
resonant gate-based detection can be a more sensitive approach than external electrometers while reducing the qubit architecture’s complexity. |
doi_str_mv | 10.1038/ncomms7084 |
format | article |
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in situ
gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit’s radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 μe Hz
−1/2
, the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.
Reading out the state of quantum bits is an essential requirement that any quantum computer implementation must satisfy. Gonzalez-Zalba
et al
. now show that
in situ
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in situ
gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit’s radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 μe Hz
−1/2
, the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.
Reading out the state of quantum bits is an essential requirement that any quantum computer implementation must satisfy. Gonzalez-Zalba
et al
. now show that
in situ
resonant gate-based detection can be a more sensitive approach than external electrometers while reducing the qubit architecture’s complexity.</description><subject>639/766/119/1000/1016</subject><subject>639/766/119/1000/1017</subject><subject>639/925/927/511</subject><subject>639/925/930/1032</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><issn>2041-1723</issn><issn>2041-1723</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNpl0E1LwzAcBvAgihtzFz-AFLyIUpf3pEcZvsFAD3ouaZJ2HW0zk_bgtzejU4fmkoT8eP7hAeAcwVsEiVx02rVtEFDSIzDFkKIUCUyOD84TMA9hA-MiGZKUnoIJZnx3x1OwePWuqLsq6dc2aeq27kPiyqRSvU0LFaxJ9Fr5yibBdiG6M3BSqibY-X6fgfeH-7flU7p6eXxe3q1STRnpU6WNosYYIiDFkpGCGi2I4pgoyjLBjWEUSsmMpppDzLOMo4wRVEKpmZCCzMDVmLv17mOwoc_bOmjbNKqzbgg54gxTBBHLIr38Qzdu8F38XVSUCwwzTKK6HpX2LgRvy3zr61b5zxzBfNdk_ttkxBf7yKForfmh371FcDOCEJ-6yvqDmf_jvgDw-3p-</recordid><startdate>20150120</startdate><enddate>20150120</enddate><creator>Gonzalez-Zalba, M. 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F.</au><au>Barraud, S.</au><au>Ferguson, A. J.</au><au>Betz, A. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Probing the limits of gate-based charge sensing</atitle><jtitle>Nature communications</jtitle><stitle>Nat Commun</stitle><addtitle>Nat Commun</addtitle><date>2015-01-20</date><risdate>2015</risdate><volume>6</volume><issue>1</issue><spage>6084</spage><epage>6084</epage><pages>6084-6084</pages><artnum>6084</artnum><issn>2041-1723</issn><eissn>2041-1723</eissn><abstract>Quantum computation requires a qubit-specific measurement capability to readout the final state of individual qubits. Promising solid-state architectures use external readout electrometers but these can be replaced by a more compact readout element, an
in situ
gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit’s radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 μe Hz
−1/2
, the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.
Reading out the state of quantum bits is an essential requirement that any quantum computer implementation must satisfy. Gonzalez-Zalba
et al
. now show that
in situ
resonant gate-based detection can be a more sensitive approach than external electrometers while reducing the qubit architecture’s complexity.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>25600002</pmid><doi>10.1038/ncomms7084</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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title | Probing the limits of gate-based charge sensing |
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