Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60 Phototransistor

A highly sensitive single‐walled carbon nanotube/C60‐based infrared photo­transistor is fabricated with a responsivity of 97.5 A W−1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of –0.5 V. The much improved performance is enabled by this unique device architecture that enab...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-01, Vol.27 (4), p.759-765
Main Authors: Park, Steve, Kim, Soo Jin, Nam, Ji Hyun, Pitner, Gregory, Lee, Tae Hoon, Ayzner, Alexander L., Wang, Huiliang, Fong, Scott W., Vosgueritchian, Michael, Park, Young Jun, Brongersma, Mark L., Bao, Zhenan
Format: Article
Language:English
Subjects:
carbon nanotubes
fullerene
photodetectors
transistors
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Summary:A highly sensitive single‐walled carbon nanotube/C60‐based infrared photo­transistor is fabricated with a responsivity of 97.5 A W−1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of –0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201404544