Theoretical study of polarization insensitivity of carrier-induced refractive index change of multiple quantum well

• Published in: Optics express 2014-12, Vol.22 (26), p.31893-31898
• Main Authors: Miao, Qingyuan, Zhou, Qunjie, Cui, Jun, He, Ping-An, Huang, Dexiu
• Format: Article
• Language: English
• Subjects: Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Light; Models, Theoretical; Refractometry - instrumentation; Refractometry - methods; Scattering, Radiation; Surface Plasmon Resonance - instrumentation; Surface Plasmon Resonance - methods; Temperature; Tensile Strength
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.22.031893

Characteristics of polarization insensitivity of carrier-induced refractive index change of 1.55 μm tensile-strained multiple quantum well (MQW) are theoretically investigated. A comprehensive MQW model is proposed to effectively extend the application range of previous models. The model considers the temperature variation as well as the nonuniform distribution of injected carrier in MQW. Tensile-strained MQW is expected to achieve polarization insensitivity of carrier-induced refractive index change over a wide wavelength range as temperature varies from 0°C to 40°C, while the magnitude of refractive index change keeps a large value (more than 3 × 10 ). And that the polarization insensitivity of refractive index change can maintain for a wide range of carrier concentration. Multiple quantum well with different material and structure parameters is anticipated to have the similar polarization insensitivity of refractive index change, which shows the design flexibility.