High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector

A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-ty...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2015-02, Vol.7 (4), p.2452-2458
Main Authors: Liu, Xiang, Ji, Xiangbing, Liu, Mingju, Liu, Nianze, Tao, Zhi, Dai, Qing, Wei, Lei, Li, Chi, Zhang, Xiaobing, Wang, Baoping
Format: Article
Language:English
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Summary:A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, −3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼103) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.
ISSN:1944-8244
1944-8252
DOI:10.1021/am5072173