High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector

A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-ty...

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Published in:ACS applied materials & interfaces 2015-02, Vol.7 (4), p.2452-2458
Main Authors: Liu, Xiang, Ji, Xiangbing, Liu, Mingju, Liu, Nianze, Tao, Zhi, Dai, Qing, Wei, Lei, Li, Chi, Zhang, Xiaobing, Wang, Baoping
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container_issue 4
container_start_page 2452
container_title ACS applied materials & interfaces
container_volume 7
creator Liu, Xiang
Ji, Xiangbing
Liu, Mingju
Liu, Nianze
Tao, Zhi
Dai, Qing
Wei, Lei
Li, Chi
Zhang, Xiaobing
Wang, Baoping
description A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, −3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼103) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1652454335</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1652454335</sourcerecordid><originalsourceid>FETCH-LOGICAL-a315t-7885193a66394b335d0c70696a5ab210c1289a5bf8e6ac616528985d3d5704453</originalsourceid><addsrcrecordid>eNptkE1PwkAQhjdGI4ge_AOmFxM9VPa77dGAggkJmOjFS7Nsp1JCu7gfif57l4CcPO1s5pknMy9C1wQ_EEzJULUCZ5Rk7AT1ScF5mlNBT4815z104dwaY8koFueoR4WQhFPaR9W0-VylC7C1sa3qNCQTSF6D6nxok7HxyRi0scpDlUys2q6gg-FH0-l0_t1UkEzBgzXO26B9sJC8dLVVNsKLlfGmil3tjb1EZ7XaOLg6vAP0_vz0Npqms_nkZfQ4SxUjwqdZngtSMCUlK_iSMVFhnWFZSCXUkhKsCc0LJZZ1DlJpSaSI_1xUrBIZ5lywAbrbe7fWfAVwvmwbp2GzUR2Y4MrdBBc8miN6v0d1XN9ZqMutbVplf0qCy12o5THUyN4ctGHZQnUk_1KMwO0eUNqVaxNsF6_8R_QLYAl8Ng</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1652454335</pqid></control><display><type>article</type><title>High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read &amp; Publish Agreement 2022-2024 (Reading list)</source><creator>Liu, Xiang ; Ji, Xiangbing ; Liu, Mingju ; Liu, Nianze ; Tao, Zhi ; Dai, Qing ; Wei, Lei ; Li, Chi ; Zhang, Xiaobing ; Wang, Baoping</creator><creatorcontrib>Liu, Xiang ; Ji, Xiangbing ; Liu, Mingju ; Liu, Nianze ; Tao, Zhi ; Dai, Qing ; Wei, Lei ; Li, Chi ; Zhang, Xiaobing ; Wang, Baoping</creatorcontrib><description>A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, −3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼103) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/am5072173</identifier><identifier>PMID: 25561422</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS applied materials &amp; interfaces, 2015-02, Vol.7 (4), p.2452-2458</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a315t-7885193a66394b335d0c70696a5ab210c1289a5bf8e6ac616528985d3d5704453</citedby><cites>FETCH-LOGICAL-a315t-7885193a66394b335d0c70696a5ab210c1289a5bf8e6ac616528985d3d5704453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25561422$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Xiang</creatorcontrib><creatorcontrib>Ji, Xiangbing</creatorcontrib><creatorcontrib>Liu, Mingju</creatorcontrib><creatorcontrib>Liu, Nianze</creatorcontrib><creatorcontrib>Tao, Zhi</creatorcontrib><creatorcontrib>Dai, Qing</creatorcontrib><creatorcontrib>Wei, Lei</creatorcontrib><creatorcontrib>Li, Chi</creatorcontrib><creatorcontrib>Zhang, Xiaobing</creatorcontrib><creatorcontrib>Wang, Baoping</creatorcontrib><title>High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, −3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼103) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNptkE1PwkAQhjdGI4ge_AOmFxM9VPa77dGAggkJmOjFS7Nsp1JCu7gfif57l4CcPO1s5pknMy9C1wQ_EEzJULUCZ5Rk7AT1ScF5mlNBT4815z104dwaY8koFueoR4WQhFPaR9W0-VylC7C1sa3qNCQTSF6D6nxok7HxyRi0scpDlUys2q6gg-FH0-l0_t1UkEzBgzXO26B9sJC8dLVVNsKLlfGmil3tjb1EZ7XaOLg6vAP0_vz0Npqms_nkZfQ4SxUjwqdZngtSMCUlK_iSMVFhnWFZSCXUkhKsCc0LJZZ1DlJpSaSI_1xUrBIZ5lywAbrbe7fWfAVwvmwbp2GzUR2Y4MrdBBc8miN6v0d1XN9ZqMutbVplf0qCy12o5THUyN4ctGHZQnUk_1KMwO0eUNqVaxNsF6_8R_QLYAl8Ng</recordid><startdate>20150204</startdate><enddate>20150204</enddate><creator>Liu, Xiang</creator><creator>Ji, Xiangbing</creator><creator>Liu, Mingju</creator><creator>Liu, Nianze</creator><creator>Tao, Zhi</creator><creator>Dai, Qing</creator><creator>Wei, Lei</creator><creator>Li, Chi</creator><creator>Zhang, Xiaobing</creator><creator>Wang, Baoping</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20150204</creationdate><title>High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector</title><author>Liu, Xiang ; Ji, Xiangbing ; Liu, Mingju ; Liu, Nianze ; Tao, Zhi ; Dai, Qing ; Wei, Lei ; Li, Chi ; Zhang, Xiaobing ; Wang, Baoping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a315t-7885193a66394b335d0c70696a5ab210c1289a5bf8e6ac616528985d3d5704453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Xiang</creatorcontrib><creatorcontrib>Ji, Xiangbing</creatorcontrib><creatorcontrib>Liu, Mingju</creatorcontrib><creatorcontrib>Liu, Nianze</creatorcontrib><creatorcontrib>Tao, Zhi</creatorcontrib><creatorcontrib>Dai, Qing</creatorcontrib><creatorcontrib>Wei, Lei</creatorcontrib><creatorcontrib>Li, Chi</creatorcontrib><creatorcontrib>Zhang, Xiaobing</creatorcontrib><creatorcontrib>Wang, Baoping</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Xiang</au><au>Ji, Xiangbing</au><au>Liu, Mingju</au><au>Liu, Nianze</au><au>Tao, Zhi</au><au>Dai, Qing</au><au>Wei, Lei</au><au>Li, Chi</au><au>Zhang, Xiaobing</au><au>Wang, Baoping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2015-02-04</date><risdate>2015</risdate><volume>7</volume><issue>4</issue><spage>2452</spage><epage>2458</epage><pages>2452-2458</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W) , of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, −3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼103) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>25561422</pmid><doi>10.1021/am5072173</doi><tpages>7</tpages></addata></record>
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url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T02%3A52%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Performance%20Ge%20Quantum%20Dot%20Decorated%20Graphene/Zinc-Oxide%20Heterostructure%20Infrared%20Photodetector&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Liu,%20Xiang&rft.date=2015-02-04&rft.volume=7&rft.issue=4&rft.spage=2452&rft.epage=2458&rft.pages=2452-2458&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/am5072173&rft_dat=%3Cproquest_cross%3E1652454335%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a315t-7885193a66394b335d0c70696a5ab210c1289a5bf8e6ac616528985d3d5704453%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1652454335&rft_id=info:pmid/25561422&rfr_iscdi=true