Controlled Doping of Large-Area Trilayer MoS2 with Molecular Reductants and Oxidants

Highly uniform large‐area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work‐function changes of up to ±1 eV can be achieved, with...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-02, Vol.27 (7), p.1175-1181
Main Authors: Tarasov, Alexey, Zhang, Siyuan, Tsai, Meng-Yen, Campbell, Philip M., Graham, Samuel, Barlow, Stephen, Marder, Seth R., Vogel, Eric M.
Format: Article
Language:English
Subjects:
2D materials
chemical doping
field-effect transistors
molybdenum disulfide
redox-active species
Online Access:Get full text
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Summary:Highly uniform large‐area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work‐function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 1012 cm−2.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201404578