Magnetic Properties of Co-Doped TiO sub(2) Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO sub(2) thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can...

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Bibliographic Details
Published in:Chinese physics letters 2014-02, Vol.31 (2), p.027501-1-027501-4
Main Authors: XIA, Yu-Qian, SUN, Lei, XU, Hao, HAN, Jing-Wen, ZHANG, Yi-Bo, WANG, Yi, ZHANG, Sheng-Dong
Format: Article
Language:English
Subjects:
Buffers
Clusters
Cobalt
Scanning electron microscopy
Silicon substrates
Titanium dioxide
Titanium nitride
X-rays
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Summary:Co-doped TiO sub(2) thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400 [degrees]C deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X-ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the ma terial analysis, the magnetic behavior after hydrogena tion is suggested to be induced by the enhancement of cobalt clusters.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/2/027501