Synthesis and Photoluminescence Properties of GaAs Nanowires Grown on Fused Quartz Substrates

GaAs nanowires are synthesized on fused quartz substrates by using molecular beam epitaxy via a vapor-liquidsolid mechanism with gold as the catalyst. High resolution-transmission electron microscopy is used to probe crystal quality and growth direction. Miero-photolumineseenee measurements are carr...

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Bibliographic Details
Published in:Chinese physics letters 2014-05, Vol.31 (5), p.100-103
Main Author: 赵玉峰 李新化 史同飞 王文博 周步康 段花花 曾雪松 李宁 王玉琦
Format: Article
Language:English
Subjects:
Catalysts
Fused quartz
GaAs
Gallium arsenide
Gallium arsenides
Molecular beam epitaxy
Nanowires
Photoluminescence
Zinc
发光性能
合成
熔融
生长方向
石英衬底
纳米线
透射电子显微镜
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Summary:GaAs nanowires are synthesized on fused quartz substrates by using molecular beam epitaxy via a vapor-liquidsolid mechanism with gold as the catalyst. High resolution-transmission electron microscopy is used to probe crystal quality and growth direction. Miero-photolumineseenee measurements are carried out to examine the optical properties of GaAs NWs. The low-temperature photoluminescenee （PL） emission of nanowires （NWs） has a peak at 1.513eV, 2meV lower than the zinc blende GaAs free exciton energy. The temperature-dependent band gap of NWs is seen to be somewhat different from that observed in bulk OaAs, and the PL rapidly quenches above 150K, with an activation energy of 6.3meV reflecting the presence of the longitudinal twins＇ structure.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/5/056101