Band diagram of the Si-LiNbO3 heterostructures grown by radio-frequency magnetron sputtering

Highly c-axis-oriented polycrystalline LiNbO3 films on Si(001) substrates were prepared by the radio-frequency magnetron sputtering process. Measurements of the fundamental absorption edge indicated that the optical band gap corresponds to direct and indirect transitions with energies Egdir=4.2eV an...

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Bibliographic Details
Published in:Thin solid films 2013-09, Vol.542, p.289-294
Main Authors: Ievlev, V., Sumets, M., Kostyuchenko, A., Ovchinnikov, O., Vakhtel, V., Kannykin, S.
Format: Article
Language:English
Subjects:
Backscattering
Charge transport
Electrical properties
Emission
Ferroelectrics
Heterojunctions
LiNbO3
Lithium
Magnetron sputtering
Silicon substrates
Sputtering
Thin films
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Summary:Highly c-axis-oriented polycrystalline LiNbO3 films on Si(001) substrates were prepared by the radio-frequency magnetron sputtering process. Measurements of the fundamental absorption edge indicated that the optical band gap corresponds to direct and indirect transitions with energies Egdir=4.2eV and Egind=2.2eV, respectively. Analysis of the Rutherford backscattering data suggested that Li atoms penetrate into silicon substrate forming inhomogeneous donor distribution. Based on the analysis of current–voltage and capacitance-voltage characteristics, the band diagram of the Si-LiNbO3 heterojunction was proposed. It was demonstrated that charge transport is affected by the barrier's properties at the heterojunction and it can be described in the framework of the Richardson–Schottky emission and Fowler–Nordheim tunneling. •Highly c-axis-oriented LiNbO3 films were grown by the magnetron sputtering method.•The energy of the indirect and direct band gap was 4.2eV and 2.2eV, respectively.•All parameters of the band diagram of the Si-LiNbO3 heterojunction were derived.•Charge transport was found to affect both Fowler–Nordheim and Schottky emission.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.06.080