Growth and characterization of tin sulphide thin films by chemical bath deposition using ethylene diamine tetra-acetic acid as the complexing agent

Tin sulphide (SnS), a promising, non-toxic and low-cost solar cell absorber layer, is grown using Chemical Bath Deposition technique at room temperature. The effects of concentration of ethlene diamine tetra-acetic acid, the complexing agent in the starting solution, as well as thioacetamide, the so...

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Bibliographic Details
Published in:Thin solid films 2013-06, Vol.537, p.149-155
Main Authors: Jayasree, Y., Chalapathi, U., Sundara Raja, V.
Format: Article
Language:English
Subjects:
Applied sciences
Chemical bath deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition
Diamines
Energy
Ethylene
Ethylene diamine tetra acitic acid
Exact sciences and technology
Lattice parameters
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Natural energy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photovoltaic conversion
Physics
SnS
Solar cell absorber
Solar cells. Photoelectrochemical cells
Solar energy
Sulfides
Sulfur
Theory and models of film growth
Thin films
Tin
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Summary:Tin sulphide (SnS), a promising, non-toxic and low-cost solar cell absorber layer, is grown using Chemical Bath Deposition technique at room temperature. The effects of concentration of ethlene diamine tetra-acetic acid, the complexing agent in the starting solution, as well as thioacetamide, the source of sulphur, on the growth of tin sulphide films are investigated to obtain single phase SnS films. The films deposited under optimized conditions are found to be near-stoichiometric, single phase SnS with orthorhombic structure. The lattice parameters are found to be a=0.428nm, b=1.141nm and c=0.396nm. The direct optical band gap of these films is found to be 1.55eV. •Growth of SnS, a potential solar cell absorber layer, by chemical bath deposition•Ethylenediaminetetraacetic acid (EDTA) as complexing agent for SnS film growth•Effect of EDTA concentration on the growth and properties of tin sulphide films•Effect of thioacetamide concentration on the growth and properties of films•X-ray diffraction and Raman Spectra studies for phase analysis
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.03.013