P.12: Development of Post-annealing Method for Flexible Oxide TFTs Application

Microwave annealing was used instead of furnace annealing to post‐treat a nitridated amorphous InGaZnO thin film transistor (a‐IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a‐IGZO:N TFT with microwave annealing process of 300s is well competitive...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.1026-1028
Main Authors: Fuh, Chur-Shyang, Liu, Po-Tsun, Teng, Li-Feng, Fan, Yang-Shun, Chang, Chih-Hsiang, Wu, Yu-Ta, Huang, Sih-Wei, Shieh, Han-Ping D.
Format: Article
Language:English
Subjects:
Annealing
Budgeting
Furnaces
Heating
Microwaves
Oxides
Semiconductor devices
Thin film transistors
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Summary:Microwave annealing was used instead of furnace annealing to post‐treat a nitridated amorphous InGaZnO thin film transistor (a‐IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a‐IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06397.x